Title :
The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I) samples studied by hard X-ray photoelectron spectroscopy (HX-PES)
Author :
Jin, C.G. ; Sasaki, Y. ; Okashita, K. ; Mizuno, B. ; Kobata, M. ; Kim, J.J. ; Ikenaga, E. ; Kobayashi, K.
Author_Institution :
Ultimate Junction Technol. Inc., Osaka
Abstract :
We measured HX-PES (Si 1s) of low energy ion implanted silicon substrate before and after spike RTA, and compared it with that of plasma doped (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. After spike RTA, PD sample showed superior impurity activation than that of I/I sample. Both I/I sample and PD sample showed excellent recrystallization after spike RTA. HX-PES can be very useful for optimizing the semiconductor doping and thermal activation processes for advanced micro-devices that have the junction depth shallower than 10 nm.
Keywords :
X-ray photoelectron spectra; boron; elemental semiconductors; ion implantation; nanotechnology; plasma materials processing; rapid thermal annealing; semiconductor doping; silicon; Si:B - Interface; X-ray photoelectron spectroscopy; chemical binding states; impurity activation; ion implantation; recrystallization; semiconductor doping; spike RTA; ultra shallow plasma doping; Chemicals; Doping; Energy measurement; Ion implantation; Plasma chemistry; Plasma immersion ion implantation; Plasma measurements; Plasma x-ray sources; Silicon; Spectroscopy; Hard X-ray Photoelectron spectroscopy; Plasma doping; binding energy;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279944
