Title :
Influence of strain on exciton lifetime in AlGaInP/GaInP quantum wells
Author :
Domen, K. ; Kondo, M. ; Tanahashi, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
We investigated the influence of strain on the exciton lifetime in AlGaInP/GaInP quantum wells grown by metalorganic vapor phase epitaxy. We found that exciton lifetime becomes shorter under compressive strain and longer under tensile strain. We found a strong correlation between the lifetime and the interfacial recombination velocity of the samples. We propose that the degradation in interface quality decreases the area of coherence of the exciton, increasing the lifetime, as the strain moves from compressive to tensile
Keywords :
III-V semiconductors; aluminium compounds; electron-hole recombination; excitons; gallium compounds; indium compounds; interface states; photoluminescence; piezo-optical effects; radiative lifetimes; semiconductor growth; semiconductor quantum wells; surface recombination; time resolved spectra; vapour phase epitaxial growth; AlGaInP-GaInP; AlGaInP/GaInP quantum wells; coherence; compressive strain; exciton lifetime; interface quality; interfacial recombination velocity; metalorganic vapor phase epitaxy; radiative lifetime; strain; tensile strain; time resolved photoluminescence; Capacitive sensors; Epitaxial growth; Excitons; Gallium arsenide; Laser excitation; Radiative recombination; Strain measurement; Substrates; Temperature; Tensile strain;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522117
