Formation of Shallow Junctions Using Ge-Si Heterostructures for High Mobility Channel MOSFETs

Author

Oh, Jungwoo ; Majhi, P. ; Lee, Hi-Deok ; Lee, Kyong-Taek ; Choi, Won-Ho ; Yang, Ji-Woon ; Kang, Chang Yong ; Harris, Rusty ; Song, S.C. ; Kalra, Pankaj ; Lee, Sehoon ; Banerjee, Sanjay ; Lee, Byoung Hun ; Tseng, Hsing-Huang ; Jammy, Raj

Author_Institution

SEMATECH, Austin

fYear

2007

fDate

8-9 June 2007

Firstpage

55

Lastpage

60

Abstract

Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.

Keywords

MOSFET; carrier mobility; elemental semiconductors; germanium; ion implantation; leakage currents; semiconductor heterojunctions; silicon; Ge-Si; Ge-Si - Interface; MOSFET; activation temperature; heterostructures; high mobility channel; ions implantation; reverse leakage current; shallow junctions; short channel effects; subthreshold swing; Boron; CMOS technology; Epitaxial layers; Jamming; Leakage current; MOSFETs; Silicon; Substrates; Temperature dependence; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Junction Technology, 2007 International Workshop on

Conference_Location

Kyoto

Print_ISBN

1-4244-1103-3

Electronic_ISBN

1-4244-1104-1

Type

conf

DOI

10.1109/IWJT.2007.4279946

Filename

4279946