Author :
Oh, Jungwoo ; Majhi, P. ; Lee, Hi-Deok ; Lee, Kyong-Taek ; Choi, Won-Ho ; Yang, Ji-Woon ; Kang, Chang Yong ; Harris, Rusty ; Song, S.C. ; Kalra, Pankaj ; Lee, Sehoon ; Banerjee, Sanjay ; Lee, Byoung Hun ; Tseng, Hsing-Huang ; Jammy, Raj
Abstract :
Shallow junctions formed on thin Ge-on-Si heterostructures are characterized in this paper. The reverse leakage current showed a strong dependence on the Ge thickness, which is believed to be due to the different activation temperature of ions implanted in the Ge layers and in the Si substrates. Ge pMOSFETs fabricated on thin Ge layers showed more significant improvement in short channel effects (SCEs) and subthreshold swing (SS) characteristics than those on thick Ge layers. Ge pMOSFETs on thin Ge are a very promising device structure for future technology nodes because of their superior immunity to short channel effects and potential drivability due to their high mobility channel.
Keywords :
MOSFET; carrier mobility; elemental semiconductors; germanium; ion implantation; leakage currents; semiconductor heterojunctions; silicon; Ge-Si; Ge-Si - Interface; MOSFET; activation temperature; heterostructures; high mobility channel; ions implantation; reverse leakage current; shallow junctions; short channel effects; subthreshold swing; Boron; CMOS technology; Epitaxial layers; Jamming; Leakage current; MOSFETs; Silicon; Substrates; Temperature dependence; Thermal stability;
