Title :
K-Band monolithic GaAs PHEMT amplifiers
Author :
Lin, Kun-You ; Deng, Kuo-Liang ; Kuo, Po-Wei ; Yang, Shin-Der ; Wang, Huei ; Chu, Tah-Hsiung
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
This paper presents the designs and measurement results of several K-band monolithic microwave integrated circuits (MMIC) including 21-26 GHz amplifiers and 2-25 GHz distributed amplifiers. The MMIC chips are fabricated with a 0.2-μm gate-length pseudomorphic (PM) GaAs-based HEMT MMIC technology, carried out by commercially available foundry
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MMIC; gallium arsenide; 0.2 micron; 2 to 25 GHz; 21 to 26 GHz; GaAs; K-band monolithic GaAs PHEMT amplifier; MMIC chip; distributed amplifier; Distributed amplifiers; Gallium arsenide; Integrated circuit measurements; K-band; MMICs; Microwave integrated circuits; Microwave measurements; Monolithic integrated circuits; PHEMTs; Semiconductor device measurement;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925746
