Extension Engineering using Carbon co-Implantation Technology for Low Power CMOS Design with Phosphorus- and Boron-Extension

We have developed a carbon (C) co-implantation technology that enables drastic improvement of Vth rolloff in nMOSFET having phosphorus (P) extension while maintaining the current drive, and reduces the extension sheet resistance in pMOSFET having boron (B) extension. The data revealed that C introduced into the extension region suppresses the P-extension tail for nMOSFET and improves B activation ratio for pMOSFET. We also found that combination of C and indium (In) pocket plays an important role for Vth rolloff improvement in nMOSFET.