Title :
CMOS active inductors for L band
Author :
Mascarenhas, Guilherme ; Caldinhas Vaz, J. ; Costa Freire, J.
Author_Institution :
Inst. de Telecomunicacoes, Inst. Superior Tecnico, Lisbon, Portugal
Abstract :
The implementation of CMOS active inductors at 2 GHz is described. The circuit is based on the gyrators theory. Theoretical expressions are derived with an enough accurate MOSFET model. With 0.6 μm CMOS standard technology is possible to obtain up to a few tenth of nanohenry inductance with a Q close to 10 at 2 GHz. A MMIC was designed and the first results confirm the theoretical predictions
Keywords :
CMOS integrated circuits; Q-factor; field effect MMIC; gyrators; inductors; 0.6 micron; 2 GHz; CMOS active inductor; L-band; MMIC; MOSFET model; Q-factor; gyrator circuit; inductance; Active inductors; CMOS technology; Costs; Dynamic range; FETs; Gallium arsenide; Gyrators; MMICs; MOSFET circuits; Spirals;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925747
