DocumentCode :
3133061
Title :
Arsenic Diffusion in strained Si/relaxed Si1-xGex and its electrical characteristics
Author :
Sumitomo, Takamichi ; Matsumoto, Satoru
Author_Institution :
Keio Univ., Yokohama
fYear :
2007
fDate :
8-9 June 2007
Firstpage :
65
Lastpage :
66
Abstract :
In this work, the authors investigated arsenic diffusion in s-Si/Si1-xGex with the use of thermal diffusion method in order to avoid the crystal damage due to ion-implantation and tried to clarify the Ge chemical effect and strain effect on dopant diffusion. We also studied electrical characteristics in As-diffused s-Si/Si1-xGex heterostructures.
Keywords :
CVD coatings; Ge-Si alloys; arsenic; electron mobility; elemental semiconductors; ion implantation; semiconductor heterojunctions; semiconductor materials; silicon; thermal diffusion; Si-SiGe:As; arsenic diffusion; crystal damage; dopant diffusion; electrical characteristics; ion implantation; low pressure chemical vapour deposition; strain effect; thermal diffusion; Capacitive sensors; Chemicals; Electric variables; Germanium silicon alloys; MOSFET circuits; Rough surfaces; Silicon germanium; Solids; Surface roughness; Tensile strain;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
Type :
conf
DOI :
10.1109/IWJT.2007.4279949
Filename :
4279949
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3133061
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