Title :
High efficiency power amplifier using Ge/Si HBT
Author :
Gao, Bao-Xin ; Wang, Ying
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
Abstract :
A class E amplifier using the new device - Ge/Si HBT is analyzed and constructed. The nonlinear capacitance of the collector of HBT is calculated with method of Genetic Algorithm and Ronger-Kutta. The non-infinitive inductance in DC-supply circuit has been considered also. The amplifier power efficiency is 87%, output power is 0.26 W in 650 MHz
Keywords :
Runge-Kutta methods; UHF power amplifiers; bipolar transistor circuits; elemental semiconductors; genetic algorithms; germanium; heterojunction bipolar transistors; silicon; 0.26 W; 650 MHz; 87 percent; Ge-Si; Ge/Si HBT; Runge-Kutta method; class E power amplifier; genetic algorithm; inductance; nonlinear capacitance; output power; power efficiency; Capacitance; Capacitors; Circuits; Frequency; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Switches; Voltage;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925749
