DocumentCode
3133075
Title
High efficiency power amplifier using Ge/Si HBT
Author
Gao, Bao-Xin ; Wang, Ying
Author_Institution
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fYear
2000
fDate
2000
Firstpage
161
Lastpage
164
Abstract
A class E amplifier using the new device - Ge/Si HBT is analyzed and constructed. The nonlinear capacitance of the collector of HBT is calculated with method of Genetic Algorithm and Ronger-Kutta. The non-infinitive inductance in DC-supply circuit has been considered also. The amplifier power efficiency is 87%, output power is 0.26 W in 650 MHz
Keywords
Runge-Kutta methods; UHF power amplifiers; bipolar transistor circuits; elemental semiconductors; genetic algorithms; germanium; heterojunction bipolar transistors; silicon; 0.26 W; 650 MHz; 87 percent; Ge-Si; Ge/Si HBT; Runge-Kutta method; class E power amplifier; genetic algorithm; inductance; nonlinear capacitance; output power; power efficiency; Capacitance; Capacitors; Circuits; Frequency; Heterojunction bipolar transistors; High power amplifiers; Power amplifiers; Power generation; Switches; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 2000 Asia-Pacific
Conference_Location
Sydney, NSW
Print_ISBN
0-7803-6435-X
Type
conf
DOI
10.1109/APMC.2000.925749
Filename
925749
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