Title :
Improving Junction Uniformity and Quality with Optimized Diffusion-less Annealing
Author :
Borland, John ; Ootsuka, Fumio ; Aoyama, Takayuki ; Onizawa, Takashi ; Buczkowski, Andrzej
Author_Institution :
J.O.B. Technol., Aiea
Abstract :
Comparisons between B, Ge+B and B18H22 implantations for pSDE were made. With Flash only the localized individual Xe-lamps signature was clearly detected by PLi and Rs measurements. Adding a spike first RTA anneal dramatically improved the global and local micro uniformity variation by 2-3x with either a 1000degC or 900degC spike 1st anneal. The highest quality B junctions were achieved with B18H22 for all annealing conditions as verified by PLi value and junction leakage current.
Keywords :
arsenic; boron; boron compounds; elemental semiconductors; germanium; ion implantation; leakage currents; rapid thermal annealing; semiconductor junctions; silicon; RTA; Si:As - Interface; Si:B - Interface; Si:Ge,B - Interface; Xe-lamp annealing; diffusion-less annealing; junction leakage current; junction uniformity; temperature 1000 degC; temperature 900 degC; Annealing; Electrical resistance measurement; Laser beams; Metals industry; Pollution measurement; Probes; Strontium; Surface contamination; Temperature dependence; Wavelength measurement;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279951
