Title :
Impact of back side circuit edit on active device performance in bulk silicon ICs
Author :
Kerst, U. ; Schlangen, Rudolf ; Kabakow, A. ; Le Roy, E. ; Lundquist, T.R. ; Pauthner, Siegfried
Author_Institution :
Berlin Univ. of Technol.
Abstract :
Parallel thinning of silicon, close to active devices, is a risk potential specific to back side editing. Monitored FETs and ring oscillators showed no significant performance change for various remaining silicon thicknesses down to SOI-like structures
Keywords :
circuit CAD; field effect transistors; focused ion beam technology; silicon; silicon-on-insulator; FET; SOI structures; active device performance; back side circuit edit; bulk silicon IC; ring oscillators; silicon parallel thinning; silicon thicknesses; Brightness; Circuit synthesis; Circuit testing; FETs; Integrated circuit packaging; Ion beams; Milling; Monitoring; Ring oscillators; Silicon;
Conference_Titel :
Test Conference, 2005. Proceedings. ITC 2005. IEEE International
Conference_Location :
Austin, TX
Print_ISBN :
0-7803-9038-5
DOI :
10.1109/TEST.2005.1584092
