Title :
The effects of gate resistance on the performances of CMOS RF circuits
Author :
Kao, Yao-Huang ; Chuang, Chao-hsi ; Lin, Tser-Yu
Author_Institution :
Inst. of Commun. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Abstract :
The BSIM3v3 model with gate resistance taken into account is employed to test the RF performances of CMOS circuits. Two circuits of a 2.4 GHz LNA and mixer fabricated by a 0.5 μm CMOS process are examined. A good agreement is obtained
Keywords :
CMOS integrated circuits; UHF amplifiers; UHF integrated circuits; UHF mixers; electric resistance; integrated circuit modelling; semiconductor device models; 0.5 micron; 2.4 GHz; BSIM3v3 model; CMOS RF circuits; LNA; gate resistance; low-noise amplifier; mixer; CMOS process; Chaotic communication; Circuit testing; Conductivity; Frequency response; Performance evaluation; Radio frequency; Roentgenium; Scattering parameters; Semiconductor device modeling;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925752
