Molecular Dopants and High Mass Dopants for HALO and Extension Implantation

Diffusion-less activation were realized for the 650degC SPE, >1300degC flash and 900degC spike anneals. For pSDE all boron dopant species (BF₂, B₁₀H₁₄ and B₁₈H₂₂) achieved high quality junctions with flash annealing. With 900degC spike either B₁₀H₁₄ or B₁₈H₂₂ can be used while with 650degC SPE annealing only B₁₈H₂₂ can be used. For pHALO using In no difference in activation level could be seen but significant differences in junction leakage was observed. No difference between BF₂ and B₁₀H₁₄ HALO activation could be seen for each annealing condition and SPE annealing resulted in the worse activation level. For nSDE with flash annealing As, As₂ and Sb activation levels were similar while P₂ was 25% better. With SPE and 900degC spike Sb gave the best activation. For nHALO As, As₂ and Sb activation levels were similar for all annealing conditions with SPE resulting in 2x lower activation. Doubling the As₂ dose improved SPE activation by 2x.