Title :
Group-V atoms exchange due to exposure of InP surface to AsH3 (+PH3) measured by X-ray CTR scattering
Author :
Yamada, N. ; Fujibayashi, K. ; Kumamoto, T. ; Tabuchi, M. ; Takeda, Y. ; Takahashi, I. ; Harada, Jiro
Author_Institution :
Dept. of Mater. Sci. & Eng., Nagoya Univ., Japan
Abstract :
We investigate samples of InP exposed to AsH3(+PH3 ), in order to study the effect of the purge sequence which appears in the OMVPE growth sequence of InP/InAs/InP structures. The purge sequence is unavoidable to grow heteroepitaxial layers which consist of different group-V atoms, and is considered to affect largely the structure of the interface. The experimental results show that the purge sequence does obstruct the abrupt interface formation
Keywords :
III-V semiconductors; X-ray diffraction; indium compounds; interface structure; semiconductor epitaxial layers; semiconductor growth; semiconductor heterojunctions; vapour phase epitaxial growth; AsH3; AsH3-PH3; InP; InP surface; InP-InAs-InP; InP/InAs/InP structures; OMVPE; X-ray CTR scattering; abrupt interface formation; group-V atoms exchange; growth sequence; heteroepitaxial layers; purge sequence; Ash; Atomic layer deposition; Atomic measurements; Indium phosphide; Optical diffraction; Optical scattering; Wavelength measurement; X-ray diffraction; X-ray imaging; X-ray scattering;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522121
