Ultra-low-noise InP-MMIC amplifiers for 85-115 GHz

Author

Archer, John W. ; Lai, Richard

Author_Institution

Telecommun. & Ind. Phys., CSIRO, Epping, NSW, Australia

fYear

2000

fDate

2000

Firstpage

173

Lastpage

176

Abstract

This paper describes a high-performance Indium Phosphide (InP) MMIC amplifier, which has been developed for application in ultra-low-noise, imaging-array receivers. The four-stage amplifier exhibits more than 15 dB gain, better than 10 dB input and output return loss and exceptionally low noise figure over the 85-115 GHz frequency range. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. This represents an outstanding achievement in millimetre-wave MMIC design. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band

Keywords

HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 10 dB; 15 dB; 85 to 115 GHz; EHF; InP; InP MIMIC amplifiers; MM-wave monolithic ICs; TRW HEMT MMIC process; fabrication process; four-stage amplifier; imaging-array receivers; low noise figure; millimetre-wave MMIC design; ultra-low-noise amplifiers; Frequency; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Remote sensing; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2000 Asia-Pacific

Conference_Location

Sydney, NSW

Print_ISBN

0-7803-6435-X

Type

conf

DOI

10.1109/APMC.2000.925753

Filename

925753