Title :
Ultra-low-noise InP-MMIC amplifiers for 85-115 GHz
Author :
Archer, John W. ; Lai, Richard
Author_Institution :
Telecommun. & Ind. Phys., CSIRO, Epping, NSW, Australia
Abstract :
This paper describes a high-performance Indium Phosphide (InP) MMIC amplifier, which has been developed for application in ultra-low-noise, imaging-array receivers. The four-stage amplifier exhibits more than 15 dB gain, better than 10 dB input and output return loss and exceptionally low noise figure over the 85-115 GHz frequency range. Only one design pass was required to obtain very good agreement between the predicted and measured characteristics of the circuit. This represents an outstanding achievement in millimetre-wave MMIC design. The overall amplifier performance is comparable to the best ever reported for MMIC amplifiers in this frequency band
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; field effect MIMIC; indium compounds; integrated circuit design; integrated circuit noise; millimetre wave amplifiers; 0.1 micron; 10 dB; 15 dB; 85 to 115 GHz; EHF; InP; InP MIMIC amplifiers; MM-wave monolithic ICs; TRW HEMT MMIC process; fabrication process; four-stage amplifier; imaging-array receivers; low noise figure; millimetre-wave MMIC design; ultra-low-noise amplifiers; Frequency; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Noise figure; Remote sensing; Testing;
Conference_Titel :
Microwave Conference, 2000 Asia-Pacific
Conference_Location :
Sydney, NSW
Print_ISBN :
0-7803-6435-X
DOI :
10.1109/APMC.2000.925753
