Title :
The determination of atomic plane on InP (001) surface by CAICISS
Author :
Nishihara, T. ; Shinohara, M. ; Ishiyama, O. ; Ohtani, F. ; Yoshimoto, M. ; Maeda, T. ; Koinuma, H.
Author_Institution :
Keihanna Res. Lab., Shimadzu Corp., Kyoto, Japan
Abstract :
We have observed the sputtered and the annealed InP (001) surfaces to determine the species of the topmost atomic plane on these surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS). We have identified that the indium top surface without serious roughness can be acquired by Ar+ sputtering even if the substrate temperature is as low as 300 °C. In AFM observations, this surface exhibits textured structure, which is composed of double atomic height steps. Furthermore, the azimuthal dependence of CAICISS spectra show two-fold symmetry with respect to the <110> axis, which indicates that the crystalline quality of this surface is quite high. Therefore, we consider that this surface is applicable to the substrate for heteroepitaxial growth
Keywords :
III-V semiconductors; annealing; indium compounds; ion-surface impact; sputtering; substrates; surface structure; surface topography; <110> axis; 300 degC; AFM observations; Ar+ sputtering; CAICISS; InP; InP (001) surface; annealed surface; atomic plane; azimuthal dependence; coaxial impact collision ion scattering spectroscopy; crystalline quality; double atomic height steps; heteroepitaxial growth; roughness; sputtered surface; substrate temperature; textured structure; topmost atomic plane; two-fold symmetry; Annealing; Argon; Coaxial components; Indium phosphide; Rough surfaces; Scattering; Spectroscopy; Sputtering; Substrates; Surface roughness;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522122
