The determination of atomic plane on InP (001) surface by CAICISS

Author

Nishihara, T. ; Shinohara, M. ; Ishiyama, O. ; Ohtani, F. ; Yoshimoto, M. ; Maeda, T. ; Koinuma, H.

Author_Institution

Keihanna Res. Lab., Shimadzu Corp., Kyoto, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

233

Lastpage

236

Abstract

We have observed the sputtered and the annealed InP (001) surfaces to determine the species of the topmost atomic plane on these surfaces by coaxial impact collision ion scattering spectroscopy (CAICISS). We have identified that the indium top surface without serious roughness can be acquired by Ar⁺ sputtering even if the substrate temperature is as low as 300 °C. In AFM observations, this surface exhibits textured structure, which is composed of double atomic height steps. Furthermore, the azimuthal dependence of CAICISS spectra show two-fold symmetry with respect to the <110> axis, which indicates that the crystalline quality of this surface is quite high. Therefore, we consider that this surface is applicable to the substrate for heteroepitaxial growth

Keywords

III-V semiconductors; annealing; indium compounds; ion-surface impact; sputtering; substrates; surface structure; surface topography; <110> axis; 300 degC; AFM observations; Ar⁺ sputtering; CAICISS; InP; InP (001) surface; annealed surface; atomic plane; azimuthal dependence; coaxial impact collision ion scattering spectroscopy; crystalline quality; double atomic height steps; heteroepitaxial growth; roughness; sputtered surface; substrate temperature; textured structure; topmost atomic plane; two-fold symmetry; Annealing; Argon; Coaxial components; Indium phosphide; Rough surfaces; Scattering; Spectroscopy; Sputtering; Substrates; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522122

Filename

522122