Title :
Impact of Pt Incorporation on Thermal Stability of NiGe Layers on Ge(001) Substrates
Author :
Nakatsuka, Osamu ; Suzuki, Atsushi ; Sakai, Akira ; Ogawa, Masaki ; Zaima, Shigeaki
Author_Institution :
Nagoya Univ., Nagoya
Abstract :
In this study, the authors attempted to improve the thermal stability of NiGe layers on Ge substrates by the incorporation of Pt into Ni/Ge systems. The crystalline and electrical properties of NiGe layers with and without Pt incorporation were investigated.
Keywords :
MOSFET; electrical contacts; germanium compounds; nickel compounds; platinum; semiconductor-metal boundaries; thermal stability; Ge; Ge(001); MOSFET; Ni-Ge; NiGe; Pt; crystalline properties; electrical contacts; metal-oxide-semiconductor field effect transistors; thermal stability; Annealing; Conductivity; Crystallization; Integrated circuit technology; MOSFET circuits; Materials science and technology; Robustness; Scanning electron microscopy; Temperature distribution; Thermal stability;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279955
