Title :
The study of the optical properties of In0.52(Alx Ga1-x)0.48As by variable angle spectroscopic ellipsometry
Author :
Pan, J.W. ; Shieh, J.L. ; Gau, J.H. ; Chyi, J.-I.
Author_Institution :
Dept. of Electr. Eng., Nat. Central Univ., Chung-Li, Taiwan
Abstract :
The optical properties of In0.52(AlxGa1-x)0.48As epilayers with various x values were systematically studied using variable angle spectroscopic ellipsometry in the wavelength range of 310-1700 nm. The refractive indexes were determined. The energies and broadening parameters of the E1 and E1+Δ1 transitions as a function of Al composition were also examined based on the second-derivative spectra of the dielectric function. The comparison between our results and the reported data is presented
Keywords :
III-V semiconductors; aluminium compounds; dielectric function; ellipsometry; gallium arsenide; indium compounds; infrared spectra; refractive index; semiconductor epitaxial layers; spectral line broadening; ultraviolet spectra; visible spectra; 310 to 1700 nm; Al composition; In0.52(AlxGa1-x)0.48As; InAlGaAs; broadening parameters; dielectric function; epilayers; optical properties; refractive indexes; second-derivative spectra; transition energies; variable angle spectroscopic ellipsometry; Ellipsometry; Indium phosphide; Molecular beam epitaxial growth; Optical films; Optical refraction; Optical variables control; Refractive index; Spectroscopy; Substrates; Thickness measurement;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522125
