Title :
Thermal Stable Nickel Silicide Utilizing Ni/Co/Ni/TiN structure and Two-Step RTP on Doped Substrate
Author :
Zhong, Zhun ; Lee, Won-Jae ; Zhang, Ying-Ying ; Li, Shi-Guang ; Jung, Soon-Yen ; Lee, Ga-Won ; Wang, Jin-Suk ; Lee, Hi-Deok
Author_Institution :
Dept. of Electron. Eng., Chungnam Nat. Univ., Daejeon
Abstract :
In this paper, the authors propose a novel Ni/Co/Ni/TiN structure to improve the thermal stability of Ni silicide on doped substrate. Two-step RTP is also utilized to increase the thermal stability.
Keywords :
MOSFET; cobalt; nickel; nickel compounds; rapid thermal annealing; silicon compounds; thermal stability; titanium compounds; MOSFET; Ni-Co-Ni-TiN; NiSi; RTP; doped substrate; salicide technologies; self-aligned silicide; thermally stable nickel silicide; two-step rapid thermal process; Atomic force microscopy; CMOS technology; Conductivity; Nickel; Rapid thermal processing; Silicides; Temperature; Thermal resistance; Thermal stability; Tin;
Conference_Titel :
Junction Technology, 2007 International Workshop on
Conference_Location :
Kyoto
Print_ISBN :
1-4244-1103-3
Electronic_ISBN :
1-4244-1104-1
DOI :
10.1109/IWJT.2007.4279958
