Title :
Raman spectroscopy study on order-disordered Ga0.52In 0.48P on GaAs grown by MOVPE
Author :
Uchida, Kazuo ; Yu, Peter Y. ; Weber, E.R. ; Noto, Nobuhiko
Author_Institution :
Tsukuba Lab., Nippon Sanso Co., Ibaraki, Japan
Abstract :
We report the first observation of single particle excitation (SPE) in electronic Raman spectroscopy as well as the plasmon related Raman peak located at 352 cm-1 in the ordered Ga0.52 In0.48P:Se with a carrier concentration of >1017 cm-3. These observations indicate that high density thermally excited carriers exist in the ordered Ga0.52 In0.48P:Se. However, the disordered Ga0.52In 0.48P:Se with almost same amount of carrier concentration does not show either SPE or plasmon related peaks. This implies that the ordering might cause a carrier confinement effect to increase the density of carriers. This confinement effect could be possible if the ordered region with a lower bandgap energy is surrounded by the disordered matrix with a higher bandgap energy in the ordered Ga0.52In0.48P
Keywords :
III-V semiconductors; Raman spectra; carrier density; energy gap; gallium compounds; indium compounds; selenium; semiconductor epitaxial layers; semiconductor growth; surface plasmons; vapour phase epitaxial growth; 352 cm-1; Ga0.52In0.48P; GaAs; MOVPE; Raman spectroscopy; bandgap energy; carrier concentration; carrier confinement effect; disordered Ga0.52In0.48P:Se; disordered matrix; electronic Raman spectroscopy; high density thermally excited carriers; order-disordered Ga0.52In0.48P; plasmon related Raman peak; single particle excitation; Epitaxial growth; Epitaxial layers; Gallium arsenide; Light scattering; Optical polarization; Optical scattering; Phonons; Raman scattering; Spectroscopy; Substrates;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522129
