A better approach to molecular implantation

A new approach to molecular implantation is presented. This is based on the use of carborane, a large and thermally stable boron molecule that can be ionized in a standard ion source. The modifications that are needed to allow it to run on a Varian VIISta HCS high current tool are discussed. Data is presented to show that the tool can use carborane for high productivity, energy contamination free boron implants. Data is also presented to demonstrate that this additional capability does not change the tool´s performance for other species and implants. The operation of the tool is described along with productivity and process data for 32 nm logic applications. Electrical data is also presented that illustrates excellent device performance.