• DocumentCode
    3133273
  • Title

    Molecular Implants for Advanced Devices

  • Author

    Rubin, Leonard M. ; Ameen, Michael S. ; Harris, Mark A. ; Huynh, Chuong

  • Author_Institution
    Axcelis Technol., Beverly
  • fYear
    2007
  • fDate
    8-9 June 2007
  • Firstpage
    113
  • Lastpage
    118
  • Abstract
    The use of implants of the B18H22 molecule for advanced IC fabrication are discussed. B18H22 can be implanted at energies up to 4 keV B equivalent at beam currents much higher than those achievable with conventional implant species. B18H22 implants have been used for polysilicon and source/drain extension doping and have shown process equivalence to conventional implants. Using B18H22 may require minor modifications to anneal and resist removal steps to minimize junction leakage and dopant loss.
  • Keywords
    boron; elemental semiconductors; integrated circuit manufacture; ion implantation; semiconductor doping; silicon; B18H22 - Binary; IC fabrication; Si:B - Interface; advanced devices; dopant loss; junction leakage; molecular implants; polysilicon; source/drain extension doping; Atomic beams; Boron; Electrons; Fabrication; Hydrogen; Implants; Ionization; Particle beams; Productivity; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2007 International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    1-4244-1103-3
  • Electronic_ISBN
    1-4244-1104-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2007.4279961
  • Filename
    4279961
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133273