Title :
Electronic and structural properties of thin SrF2 films on InP
Author :
Heun, S. ; Sugiyama, M. ; Maeyama, Shoichi ; Watanabe, Y. ; Oshima, M.
Author_Institution :
NTT Interdisciplinary Res. Labs., Tokyo, Japan
Abstract :
In this paper we present the results of our experiments on the deposition of SrF2 on InP. Four different substrates were used for these investigations: HF-etched and as-treated InP(100) and (111)B. On these surfaces 35-50 Å SrF2 was deposited at room temperature. We also studied the changes in the films due to annealing. To clarify the morphology of the films: transmission electron microscopy (TEM) and atomic force microscopy (AFM) were employed
Keywords :
III-V semiconductors; annealing; atomic force microscopy; indium compounds; insulating thin films; molecular beam epitaxial growth; semiconductor-insulator boundaries; strontium compounds; surface cleaning; surface structure; transmission electron microscopy; (111)B substrate; 20 C; 35 to 50 A; AFM; HF-etched InP(100); InP; MBE; SrF2-InP; TEM; annealing; as-treated InP(100); atomic force microscopy; electronic properties; morphology; room temperature; structural properties; substrates; thin SrF2 films; transmission electron microscopy; Crystallization; Indium phosphide; Lattices; Molecular beam epitaxial growth; Rough surfaces; Substrates; Surface roughness; Surface treatment; Temperature distribution; Transmission electron microscopy;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522131
