DocumentCode
3133286
Title
Single-ended sense amplifier robustness evaluation for OxRRAM technology
Author
Aziza, H. ; Bocquet, Michael ; Moreau, M. ; Portal, J.-M.
Author_Institution
IM2NP, Aix-Marseille Univ., Marseille, France
fYear
2013
fDate
16-18 Dec. 2013
Firstpage
1
Lastpage
5
Abstract
In this paper, impact of OxRRAM cell variability on circuit performances is analyzed quantitatively at a circuit level. A single-ended sense amplifier architecture is evaluated against memory cell variability. This study enables enhancing OxRRAM yield as well as reducing cell consumption during a read operation without compromising reliability. Due to the stochastic nature of the switching process in OxRRAMs, leading to large variability, all simulations are Monte Carlo oriented.
Keywords
Monte Carlo methods; amplifiers; integrated circuit yield; random-access storage; Monte Carlo; OxRRAM cell variability; OxRRAM technology; OxRRAM yield; circuit performances; memory cell variability; read operation; single-ended sense amplifier robustness evaluation; switching process stochastic nature; Arrays; Integrated circuit modeling; Microprocessors; Reliability; Resistance; Switches; OxRRAM; ReRAM; Resistive-RAM; variability; yield;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Test Symposium (IDT), 2013 8th International
Conference_Location
Marrakesh
Type
conf
DOI
10.1109/IDT.2013.6727097
Filename
6727097
Link To Document