Selective MOCVD growth of InP around dry-etched mesas with various patterns for photonic integrated circuits

Author

Goto, K. ; Takemi, M. ; Miura, T. ; Takemoto, A. ; Mihashi, Y. ; Takamiya, S.

Author_Institution

Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

275

Lastpage

278

Abstract

In this paper we have investigated the selective growth of a pnp-InP layer structure as well as the mass-transport effect around dry-etched mesas with various crystallographic directions of stripes. The behavior is found to depend remarkably on the stripe direction. The selective embedding growth around waveguide patterns, such as bifurcations or crossings, is also investigated

Keywords

III-V semiconductors; bifurcation; indium compounds; integrated optics; integrated optoelectronics; optical waveguides; semiconductor growth; sputter etching; vapour phase epitaxial growth; InP; bifurcations; crossings; crystallographic directions; dry-etched mesas; mass-transport effect; photonic integrated circuits; pnp-InP layer; selective MOCVD growth; selective embedding growth; selective growth; stripes; waveguide patterns; Bifurcation; Crystallography; Dry etching; Indium phosphide; Laboratories; MOCVD; Microwave devices; Microwave theory and techniques; Photonic integrated circuits; Shape;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522133

Filename

522133