• DocumentCode
    3133346
  • Title

    Novel Junction Engineering Scheme Using Combination of LSA and Spike-RTA

  • Author

    Endo, S. ; Maruyama, Y. ; Kawasaki, Y. ; Yamashita, T. ; Oda, H. ; Inoue, Y.

  • Author_Institution
    Renesas Technol. Corp., Hyogo
  • fYear
    2007
  • fDate
    8-9 June 2007
  • Firstpage
    135
  • Lastpage
    136
  • Abstract
    A novel junction engineering scheme using the combination of LSA and spike-RTA is demonstrated. Xj-Rs tradeoffs of BF2-SDE are investigated for several combinations of spike-RTA and LSA, and it is demonstrated that LSA-first process is effective for the control of the gate-SDE overlap with shallow and low-resistance SDE. This is because dopant impurities are highly activated first by LSA and diffuse by following spike-RTA keeping high-activation. This technology is promising for 45-nm node CMOS and beyond.
  • Keywords
    MOSFET; laser beam annealing; rapid thermal annealing; LSA; MOSFET; angled implantation; junction engineering; laser spike annealing; metal-oxide-semiconductor field effect transistors; rapid thermal annealing; source/drain-extension; spike-RTA; Acceleration; Annealing; Boron; Impurities; Lamps; Leakage current; MOSFETs; Power lasers; Temperature; Thermal degradation;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Junction Technology, 2007 International Workshop on
  • Conference_Location
    Kyoto
  • Print_ISBN
    1-4244-1103-3
  • Electronic_ISBN
    1-4244-1104-1
  • Type

    conf

  • DOI
    10.1109/IWJT.2007.4279967
  • Filename
    4279967
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133346