Regrowth of semi-insulating iron doped InP around crossed laser mesas by hydride vapor phase epitaxy

Author

Miyazawa, Takeo ; Kobayashi, Fumihiko ; Mori, Hidefumi

Author_Institution

NTT Opto-Electron. Labs., Kanagawa, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

283

Lastpage

286

Abstract

It was found that large hollows are left between the crossed laser mesas during the hydride vapor phase epitaxy (HVPE) of semi-insulating InP (SI InP). However, SI InP layers with flat surfaces could be regrown using a channel structure and HVPE. The laser diodes buried in SI InP using this technique had threshold current as low as 22 mA and output power as high as 25 mW. Using this technique, side-injection light-controlled bistable lasers (SILC BLD) were fabricated. The obtained SILC BLDs exhibited good bistable characteristics

Keywords

III-V semiconductors; buried layers; indium compounds; iron; optical bistability; semiconductor growth; semiconductor lasers; surface topography; vapour phase epitaxial growth; 22 mA; 25 mW; HVPE; InP:Fe; SI InP; SILC BLD; bistable characteristics; channel structure; crossed laser mesas; flat surfaces; hydride vapor phase epitaxy; large hollows; laser diodes; output power; regrowth; semi-insulating iron doped InP; side-injection light-controlled bistable lasers; threshold current; Diode lasers; Epitaxial growth; Etching; Filling; Indium phosphide; Iron; Laboratories; Power generation; Surface emitting lasers; Threshold current;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522135

Filename

522135