• DocumentCode
    3133358
  • Title

    Reducing random-dopant fluctuation impact on core-speed and power variability in many-core platforms

  • Author

    Majzoub, Sohaib ; Alars, Zaid ; Hamdioui, Said

  • Author_Institution
    King Saud Univ., Riyadh, Saudi Arabia
  • fYear
    2013
  • fDate
    16-18 Dec. 2013
  • Firstpage
    1
  • Lastpage
    6
  • Abstract
    In this paper, we propose a novel technique that uses multi-Vt design to reduce the impact of random process variation on delay and power in a many-core platform. Random variation is mostly attributed to the random-dopant fluctuation. The proposed technique reduces this fluctuation by lowering the dopant density and then compensating the threshold voltage using a footer transistor. The results show a reduction of the total standard deviation from 25% down to 17% using the proposed method.
  • Keywords
    CMOS integrated circuits; random processes; core-speed; dopant density; footer transistor; many-core platform; multithreshold voltage design; power variability; random process variation impact reduction; random-dopant fluctuation impact reduction; threshold voltage compensation; Equations; Mathematical model; Resource description framework; Standards; Systematics; Threshold voltage; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Design and Test Symposium (IDT), 2013 8th International
  • Conference_Location
    Marrakesh
  • Type

    conf

  • DOI
    10.1109/IDT.2013.6727103
  • Filename
    6727103