DocumentCode :
3133396
Title :
Preparation and optical characterization of nanoscale InP islands embedded in In0.48Ga0.52P
Author :
Kurtenbach, A. ; Eberl, K. ; Jin-Phillipp, N.Y. ; Noll, F. ; Phillipp, F.
Author_Institution :
Max-Planck-Inst. fur Festkorperforschung, Stuttgart, Germany
fYear :
1995
fDate :
9-13 May 1995
Firstpage :
295
Lastpage :
298
Abstract :
We report on the preparation of InP islands embedded in In0.48Ga0.52P by solid-source molecular beam epitaxy (MBE). We have investigated the onset of islanding by reflection high energy electron diffraction (RHEED) and atomic force microscopy (AFM). Overgrown InP islands are characterized by cross-sectional transmission electron microscopy (TEM) and photoluminescence (PL) measurements
Keywords :
III-V semiconductors; atomic force microscopy; indium compounds; island structure; molecular beam epitaxial growth; nanostructured materials; photoluminescence; reflection high energy electron diffraction; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; AFM; GaAs; In0.48Ga0.52P; InP; RHEED; atomic force microscopy; cross-sectional transmission electron microscopy; embedded islands; islanding onset; nanoscale InP islands; optical characterization; photoluminescence; reflection high energy electron diffraction; solid-source molecular beam epitaxy; Atom optics; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Electron optics; Indium phosphide; Molecular beam epitaxial growth; Optical diffraction; Optical reflection; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
Type :
conf
DOI :
10.1109/ICIPRM.1995.522138
Filename :
522138
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3133396
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