InP islands as self-assembled quantum structures

Author

Reaves, C.M. ; Cevallos, N.A. ; Hsueh, G.C. ; Cheng, Y.M. ; Weinberg, W.H. ; Petroff, P.M. ; DenBaars, S.P.

Author_Institution

Dept. of Mater., California Univ., Santa Barbara, CA, USA

fYear

1995

fDate

9-13 May 1995

Firstpage

307

Lastpage

310

Abstract

Self-assembled quantum dots have been grown in the InP/GaInP material system on GaAs substrates. The different types of dots, differentiated by size, exhibit different luminescence features. In particular, peaks at 1.82 eV and 1.57 eV have been observed. Two methods have been utilized to study emission from small regions of the sample: photoluminescence of samples with etched mesas, and cathodoluminescene of samples that have been thinned for electron microscopy. Results from both methods are discussed

Keywords

III-V semiconductors; cathodoluminescence; gallium compounds; indium compounds; island structure; photoluminescence; semiconductor growth; semiconductor quantum dots; vapour phase epitaxial growth; 1.57 eV; 1.82 eV; GaAs; GaAs substrates; InP islands; InP-GaInP; InP/GaInP material system; atmospheric pressure MOCVD; cathodoluminescene; electron microscopy; etched mesas; luminescence features; photoluminescence; sample thinning; self-assembled quantum dots; self-assembled quantum structures; Atomic force microscopy; Electrons; Etching; Gallium arsenide; Indium phosphide; Luminescence; Photoluminescence; Quantum computing; Quantum dots; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522141

Filename

522141