DocumentCode :
3133451
Title :
Magneto-luminescence study of strain and lateral confinement effects in InAs0.48P0.52/InP quantum well wires
Author :
Hammersberg, J. ; Notomi, M. ; Weman, H. ; Potemski, M. ; Sugiura, Hirotaka ; Okamoto, M. ; Tamamura, T.
Author_Institution :
Dept. of Phys. & Meas. Technol., Linkoping Univ., Sweden
fYear :
1995
fDate :
9-13 May 1995
Firstpage :
315
Lastpage :
318
Abstract :
Photoluminescence experiments on strained InAs0.48P0.52InP quantum wires show that the wire-width-dependent blue shift of the transition energy is much larger than the blue shift in lattice matched quantum wires. With magneto-luminescence measurements we are able to prove that lateral confinement effects only partly explain the observed blue shift. The other contribution comes from the strain energy which is wire width dependent in spite of a constant lattice-mismatch
Keywords :
III-V semiconductors; indium compounds; internal stresses; magneto-optical effects; photoluminescence; semiconductor quantum wires; spectral line shift; InAs0.48P0.52-InP; InAs0.48P0.52/InP quantum well wires; blue shift; energy separation; energy shift; lateral confinement effects; lattice mismatch; magneto-luminescence measurements; photoluminescence; strain energy; transition energy; wire width dependence; Capacitive sensors; Carrier confinement; Epitaxial growth; Gallium arsenide; Indium phosphide; Lattices; Magnetic confinement; Magnetic field induced strain; Semiconductor lasers; Wire;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
Type :
conf
DOI :
10.1109/ICIPRM.1995.522143
Filename :
522143
Link To Document :
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