Title :
Bandgap engineering and spatial confinement of optical phonon in ZnO quantum dots
Author :
Hsieh, Wen-Feng ; Lin, Kuo-Feng ; Cheng, Hsin-Ming ; Hsu, Hsu-Cheng
Author_Institution :
Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu
Abstract :
Upon decreasing size of ZnO quantum dots, the blueshift in bandgap reveals the quantum confinement effect and the diminishing ratio of the second- to first-order resonant Raman intensity reveals reducing the electron-phonon Frohlich interaction
Keywords :
II-VI semiconductors; Raman spectra; electron-phonon interactions; energy gap; phonons; semiconductor quantum dots; spectral line shift; zinc compounds; ZnO; ZnO quantum dots; bandgap engineering; blueshift; electron-phonon Frohlich interaction; optical phonon; quantum confinement effect; second-first-order resonant Raman intensity; spatial confinement; Heating; Optical scattering; Phonons; Photonic band gap; Quantum dot lasers; Quantum dots; Raman scattering; Resonance; Temperature; Zinc oxide;
Conference_Titel :
Lasers and Electro-Optics Society, 2006. LEOS 2006. 19th Annual Meeting of the IEEE
Conference_Location :
Montreal, Que.
Print_ISBN :
0-7803-9555-7
Electronic_ISBN :
0-7803-9555-7
DOI :
10.1109/LEOS.2006.279156
