DocumentCode
3133460
Title
MOMBE growth of InGaAsP films for optoelectronic devices
Author
Sugiura, Hideo
Author_Institution
NTT Opto-Electron. Labs., Atugi, Japan
fYear
1995
fDate
9-13 May 1995
Firstpage
321
Lastpage
324
Abstract
This paper reviews the MOMBE growth features of InGaAsP and their MQWs compared with those of MOCVD, and introduces recent MOMBE topics for optoelectronic devices. Devices considered are surface emitting lasers, strained MQW LDs, and multi-wavelength laser diode arrays
Keywords
III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; semiconductor laser arrays; semiconductor quantum wells; surface emitting lasers; InAsP-InGaAsP; InGaAs-InGaAsP; InGaAsP films; MOMBE growth; MQWs; multi-wavelength laser diode arrays; optoelectronic devices; strained MQW LDs; surface emitting lasers; Indium gallium arsenide; Lattices; MOCVD; Molecular beam epitaxial growth; Optical materials; Optoelectronic devices; Quantum well devices; Semiconductor films; Temperature distribution; Temperature sensors;
fLanguage
English
Publisher
ieee
Conference_Titel
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location
Hokkaido
Print_ISBN
0-7803-2147-2
Type
conf
DOI
10.1109/ICIPRM.1995.522144
Filename
522144
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