Title :
Excellent quality ultra-thin oxides prepared by room temperature anodic oxidation
Author :
Liu, J.S. ; Chiang, M.C. ; Chen, C.L. ; Huang, T.Y.
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
Abstract :
In this work, we present a novel oxide grown on polysilicon by room-temperature anodic oxidation (anodic polyoxide). The anodic polyoxide exhibits excellent electrical characteristics, i.e. low leakage current, high dielectric breakdown field, high effective electron barrier height, extremely low electron trapping rate, high charge-to-breakdown, and long lifetime. These, together with its low-cost and low thermal-budget features, make it very attractive for inter-poly oxide in future high-density nonvolatile memory applications
Keywords :
anodisation; dielectric thin films; electric breakdown; electron traps; integrated circuit interconnections; integrated circuit reliability; integrated memory circuits; leakage currents; oxidation; random-access storage; 20 C; Si; SiO2-Si; anodic polyoxide; charge-to-breakdown; dielectric breakdown field; effective electron barrier height; electrical characteristics; electron trapping rate; high-density nonvolatile memory applications; inter-poly oxide; leakage current; oxide cost; oxide growth; oxide lifetime; polysilicon surface; quality; room temperature anodic oxidation; thermal-budget; ultra-thin oxides; Anodes; Cathodes; Dielectric breakdown; Electrodes; Electrons; Leakage current; Oxidation; Rapid thermal annealing; Temperature; Voltage;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791295
