Simultaneous thickness and compositional uniformity in selective MOVPE growth

Author

Ekawa, Mitsuru ; Fujii, Takuya ; Yamazaki, Susumu

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

337

Lastpage

340

Abstract

We investigated the feasibility of thickness and compositional uniformity in selective MOVPE growth. Using a modified mask pattern with an additional open window in the rectangular mask area, we succeeded in making uniform the thickness distributions of InGaAs epilayers selectively grown in the striped area. From photoluminescence studies, we found that thickness and group III composition were uniform in the same region. Consequently an InP/InGaAs MQW structure exhibited a uniform PL peak wavelength in the striped area. This simultaneous uniformity suggests that the phenomena in the masked area dominate the compositional modulation of InGaAs in selective MOVPE growth

Keywords

III-V semiconductors; gallium arsenide; indium compounds; masks; photoluminescence; semiconductor epitaxial layers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; InGaAs; InP-InGaAs; InP/InGaAs MQW structure; additional open window; compositional modulation; compositional uniformity; epilayers; group III composition; modified mask pattern; photoluminescence; rectangular mask area; selective MOVPE growth; striped area; thickness distributions; thickness uniformity; uniform PL peak wavelength; Epitaxial growth; Epitaxial layers; Indium gallium arsenide; Optical devices; Optical modulation; Optical waveguides; Temperature measurement; Thickness control; Thickness measurement; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522148

Filename

522148