Title :
Impact of voids in Ti-salicided p+ polysilicon lines on TiSi2 electrical properties
Author :
Chua, H.N. ; Pey, K.L. ; Siah, S.Y. ; Ong, L.Y. ; Lim, E.H. ; Gan, C.L. ; See, K.H. ; Ho, C.S.
Author_Institution :
Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore
Abstract :
We report the effect of voids in Ti-salicided narrow p+-doped polysilicon lines on the electrical performance of the TiSi2 films. The variation in the TiSi2 sheet resistance was found to correlate well to the void density, which is a function of the poly-Si implant species and dose, the gate line-width and the p+ anneal. In addition, we find that the low frequency noise measurements are a good diagnostic method to determine the extent of voiding in silicided films
Keywords :
doping profiles; electric noise measurement; electric resistance; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit noise; integrated circuit reliability; ion implantation; titanium compounds; voids (solid); Si; Ti-salicided narrow p+-doped polysilicon lines; Ti-salicided p+ polysilicon lines; TiSi2 electrical properties; TiSi2 films; TiSi2 sheet resistance; TiSi2-Si; diagnostic method; electrical performance; gate line-width; low frequency noise measurements; p+ anneal; poly-Si implant dose; poly-Si implant species; silicided films; void density; voiding; voids; 1f noise; Electric resistance; Electrical resistance measurement; Frequency measurement; Implants; Low-frequency noise; Noise measurement; Rapid thermal annealing; Scanning electron microscopy; Stress;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791302
