Title :
9 GHz bandwidth InP-based integrated PIN-HBT photoreceiver
Author :
Gutierrez-Aitken, A.L. ; Yang, K. ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
Abstract :
An integrated photoreceiver using an InAlAs/InGaAs HBT-based transimpedance amplifier has been fabricated and characterized. The p-i-n photodiode is fabricated using the base, collector and subcollector layers of the HBT. Discrete 5 μm×5 μm emitter area transistors demonstrated fT and fmax of 57 GHz and 123 GHz, at collector currents of 10 mA and 7 mA, respectively. An amplifier with a feedback resistance of 550 Ω demonstrated an effective transimpedance bandwidth of 14 GHz and a gain of 46 dBΩ, corresponding to a very high transimpedance-bandwidth product of 2.8 THzΩ. The integrated photoreceiver measured -3 dB bandwidth is 9.5 GHz, which to the best of our knowledge is the highest reported till date for a PIN-HBT monolithically integrated photoreceiver
Keywords :
III-V semiconductors; aluminium compounds; bipolar analogue integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; optical receivers; p-i-n photodiodes; wideband amplifiers; 10 mA; 123 GHz; 14 GHz; 46 dB; 5 mum; 550 ohm; 67 GHz; 7 mA; 9 GHz; InAlAs-InGaAs; InAlAs/InGaAs HBT-based transimpedance amplifier; InP; InP-based integrated PIN-HBT photoreceiver; base layers; collector currents; collector layers; discrete 5 μm×5 μm emitter area transistors; effective transimpedance bandwidth; feedback resistance; gain; p-i-n photodiode; subcollector layers; very high transimpedance-bandwidth product; Bandwidth; Circuits; Coatings; Contacts; Fabrication; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; P-i-n diodes; PIN photodiodes;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522153
