Title :
Impact of intermetal dielectric process on Al via electromigration reliability
Author :
Liu, X. ; Lo, K.F. ; Chin, K.Y. ; Guo, Q. ; Teh, G.L.
Author_Institution :
Reliability Eng. Group, Chartered Semicond. Manuf. Ltd., Singapore
Abstract :
The impact of the intermetal dielectric (IMD) process on Al via electromigration (EM) reliability is investigated in this paper. Spin-on-glass (SOG) outgassing at the via was found to cause metal voiding at the via, resulting in high via resistance and EM degradation. Ar ion pre-sputter etch (PSE) of the via surface will contaminate the PSE chamber, which may affect via contact resistance as well as EM reliability. Standard wafer-level electromigration accelerated test (SWEAT) was found to be an effective tool for the evaluation and monitoring of EM performance
Keywords :
aluminium; contact resistance; dielectric thin films; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; life testing; monitoring; outgassing; sputter etching; voids (solid); Al; Al via electromigration; Al via electromigration reliability; Ar ion pre-sputter etch; EM performance; EM reliability; IMD process; PSE chamber contamination; SOG outgassing; SWEAT; intermetal dielectric; intermetal dielectric process; metal voiding; monitoring; spin-on-glass outgassing; standard wafer-level electromigration accelerated test; via EM degradation; via contact resistance; via resistance; via surface; vias; Argon; Contact resistance; Degradation; Dielectrics; Electromigration; Etching; Life estimation; Surface contamination; Surface resistance; Testing;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791305
