A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage

Author

Hanatani, S. ; Shishikura, M. ; Tanaka, S. ; Kitano, H. ; Miyazaki, T. ; Nakamura, H.

Author_Institution

Telecommun. Div., Hitachi Ltd., Yokohama, Japan

fYear

1995

fDate

9-13 May 1995

Firstpage

369

Lastpage

372

Abstract

For operation of an avalanche photodiode (APD) at an IC-power-supply voltage, less than 5 V, a novel edge-coupled waveguide superlattice (SL) APD is proposed. Using a strained InAlAs/InGaAs SL, multiplication factor larger than 10 is experimentally demonstrated at a bias voltage less than 7 V. A wide 3dB-bandwidth of 8 GHz is obtained at a multiplication factor of 3

Keywords

III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; optical receivers; photodetectors; semiconductor superlattices; 1.3 mum; 1.55 mum; 5 V; 7 V; 8 GHz; IC-power-supply voltage; InAlAs-InGaAs; bias voltage; edge-coupled waveguide superlattice APD; multiplication factor; strained InAlAs/InGaAs SL; strained InAlAs/InGaAs superlattice avalanche photodiode; Absorption; Avalanche photodiodes; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Optical fiber communication; Optical waveguides; Superlattices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522156

Filename

522156