Title :
A strained InAlAs/InGaAs superlattice avalanche photodiode for operation at an IC-power-supply voltage
Author :
Hanatani, S. ; Shishikura, M. ; Tanaka, S. ; Kitano, H. ; Miyazaki, T. ; Nakamura, H.
Author_Institution :
Telecommun. Div., Hitachi Ltd., Yokohama, Japan
Abstract :
For operation of an avalanche photodiode (APD) at an IC-power-supply voltage, less than 5 V, a novel edge-coupled waveguide superlattice (SL) APD is proposed. Using a strained InAlAs/InGaAs SL, multiplication factor larger than 10 is experimentally demonstrated at a bias voltage less than 7 V. A wide 3dB-bandwidth of 8 GHz is obtained at a multiplication factor of 3
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; optical receivers; photodetectors; semiconductor superlattices; 1.3 mum; 1.55 mum; 5 V; 7 V; 8 GHz; IC-power-supply voltage; InAlAs-InGaAs; bias voltage; edge-coupled waveguide superlattice APD; multiplication factor; strained InAlAs/InGaAs SL; strained InAlAs/InGaAs superlattice avalanche photodiode; Absorption; Avalanche photodiodes; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; Optical fiber communication; Optical waveguides; Superlattices; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522156
