Title :
Superconducting weak link devices using lead alloy-InAs/AlGaSb heterostructures
Author :
Maemoto, Toshihiko ; Izumiya, Satoshi ; Dobashi, Hiroyuki ; Yano, Mitsuaki ; Inoue, Masataka
Author_Institution :
Dept. of Electr. Eng., Osaka Inst. of Technol., Japan
Abstract :
Fabrication and transport properties of InAs/AlGaSb superconducting weak link devices are reported. Transport properties of two terminal devices have been measured between 2.6 K and 5.5 K, and oscillations of differential resistance due to multiple Andreev reflection have been observed. The three terminal device with a gate showed good FET performance with transconductance of 314 mS/mm at 4.2 K although superconducting current has not been modulated on the device for gate length of 0.74 μm. The process to reduce contact resistance between the PbIn alloy and InAs is also discussed, which should be crucial to demonstrate the superconducting transistor
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; etching; gallium compounds; indium alloys; indium compounds; lead alloys; photolithography; superconducting transistors; superconductor-semiconductor boundaries; 0.74 mum; 2.6 to 5.5 K; 314 mS; FET performance; Pb alloy-InAs/AlGaSb heterostructures; PbIn alloy; PbIn-InAs-AlGaSb; contact resistance reduction; differential resistance oscillations; gate length; multiple Andreev reflection; superconducting current; superconducting transistor; superconducting weak link devices; three terminal device; transconductance; transport properties; two terminal devices; wet chemical etching; Buffer layers; Chemicals; Electron mobility; Fabrication; High temperature superconductors; Lead; Lithography; Superconducting devices; Superconducting epitaxial layers; Superconducting materials;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522158
