Title :
Low-frequency trapping phenomena in AlSb/InAs HEMTs
Author :
Kruppa, W. ; Boos, J.B.
Author_Institution :
SFA Inc., Landover, MD, USA
Abstract :
Low-frequency trapping effects in AlSb/InAs/GaAs HEMTs were examined by measuring the transconductance in the frequency range from 1 Hz to 100 KHz. Several device variations with differing cap layers and doping techniques were compared. By varying the bias and temperature, information on the physical location and trap parameters was obtained. A level with an activation energy of 0.12 eV and associated with the AlSb or its interfaces was found. Several other levels associated with different cap layers were also observed
Keywords :
III-V semiconductors; aluminium compounds; deep levels; defect states; electric admittance; gallium arsenide; high electron mobility transistors; indium compounds; interface states; semiconductor device noise; 0.35 mum; 1 Hz to 100 kHz; 100 to 300 K; AlSb-InAs-GaAs; AlSb/InAs/GaAs HEMTs; Arrhenius plot; activation energy; bias variation; cap layers; deep level traps; dispersion effects; doping techniques; low frequency noise; low-frequency trapping phenomena; temperature variation; transconductance; trap parameters; Electron mobility; Electron traps; Frequency; HEMTs; Impact ionization; Leakage current; MODFETs; Temperature; Transconductance; Voltage;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522159
