Deposition of scintillating layers of bismuth germanate (BGO) films for X-ray detector applications

Author

Duan, M. ; Fröjdh, C. ; Thungström, G. ; Wang, L.W. ; Linnros, J. ; Petersson, C.S.

Author_Institution

Dept. of Electron., Kungl. Tekniska Hogskolan, Kista, Sweden

fYear

1997

fDate

9-15 Nov 1997

Firstpage

845

Abstract

Bi₄Ge₃O₁₂ films were deposited by pulsed laser ablation on glass and SiO₂/Si substrates. The crystal structures of the films depend on the deposition temperature. XRD patterns indicate that the films deposited at substrate temperature less than 400°C are amorphous. The as deposited amorphous films can be crystallized by post rapid thermal annealing (RTA) in the temperature window from 750°C to 800°C for 2 minutes in a oxygen ambient environment. RBS measurements confirm that the films has the same chemical composition as that of the target. The surface morphology of the films were characterized by atomic force microscopy

Keywords

X-ray detection; bismuth compounds; pulsed laser deposition; rapid thermal annealing; solid scintillation detectors; BGO films; Bi₄Ge₃O₁₂; Bi₄Ge₃O₁₂ films; SiO₂/Si substrates; X-ray detector applications; atomic force microscopy; bismuth germanate films; crystal structures; deposition temperature; post rapid thermal annealing; pulsed laser ablation; scintillating layers; surface morphology; Amorphous materials; Atomic force microscopy; Bismuth; Crystallization; Glass; Laser ablation; Optical pulses; Pulsed laser deposition; Semiconductor films; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Nuclear Science Symposium, 1997. IEEE

Conference_Location

Albuquerque, NM

ISSN

1082-3654

Print_ISBN

0-7803-4258-5

Type

conf

DOI

10.1109/NSSMIC.1997.672713

Filename

672713