The impact of uniaxial strain on low frequency noise of nanoscale PMOSFETs with e-SiGe and i-SiGe source/drain

The impact of uni-axial strain from embedded SiGe in recessed S/D (e-SiGe) and Ge implanted S/D (i-SiGe) on effective mobility μeff, gate leakage current, short channel effect (SCE) and low frequency noise (LFN) in pMOS has been investigated. The e-SiGe can realize superior μeff enhancement but lead to worse SCE and LFN. The i-SiGe can reduce SCE and LFN but suffers limited μeff improvement. Mobility fluctuation model can explain the trade-off and forward body biases (FBB) method can overcome the trade-off. SiGe strain combined with FBB is an effective solution in nanoscale pMOS to enhance RF and analog performance..