A comparison of interface trap generation by Fowler-Nordheim electron injection and hot-hole injection using the DCIV method

Author

Ng, K.H. ; Jie, B.B. ; He, Y.D. ; Chim, W.K. ; Li, M.-F. ; Lo, K.F.

Author_Institution

Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore

fYear

1999

fDate

1999

Firstpage

140

Lastpage

144

Abstract

We report on the different behaviours of interface trap generation caused by Fowler-Nordheim (F-N) electron injection and by hot-hole injection using the direct current current-voltage (DCIV) method. The hole-electron ratio of the gate current under hot-hole injection conditions is quantified. The study shows that the efficiency of hole-induced interface trap generation is about 150 times that of electron-induced interface trap generation. Furthermore, interface trap generation by both hole and electron injections obey a power-law relation with injected fluence. The hot-hole injection is observed to have a smaller power exponent than F-N electron injection

Keywords

MOSFET; dielectric thin films; electric current; electron traps; hole traps; interface states; semiconductor device testing; DCIV method; Fowler-Nordheim electron injection; buried channel pMOSFET; hot-hole injection; interface trap generation; Charge carrier processes; DC generators; Electron traps; Failure analysis; Helium; Hot carriers; Integrated circuit reliability; Substrates; Testing; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the

Print_ISBN

0-7803-5187-8

Type

conf

DOI

10.1109/IPFA.1999.791323

Filename

791323