• DocumentCode
    3133866
  • Title

    A novel dual-direction IC ESD protection device

  • Author

    Wang, Albert Z. ; Tsay, Chen H. ; Shan, Qing W.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    151
  • Lastpage
    155
  • Abstract
    We report the design of a novel dual-direction on-chip IC electrostatic discharge (ESD) protection device. The design was predicted by simulation, matched by measurements and features a high ESD-Si ratio of ~80 V/μm, deep snapback, low Ron of 0.64 Ω, low leakage (~pA), adjustable triggering voltage, and good scalability
  • Keywords
    circuit simulation; electrostatic discharge; integrated circuit measurement; integrated circuit reliability; leakage currents; protection; 064 ohm; ESD-Si ratio; adjustable triggering voltage; design prediction; device measurements; dual-direction IC ESD protection device; dual-direction on-chip IC electrostatic discharge protection device; leakage current; on-resistance; scalability; simulation; snapback; Breakdown voltage; Clamps; Electrostatic discharge; Electrostatic interference; Electrostatic measurements; Impedance; Predictive models; Protection; Pulse measurements; Thyristors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
  • Print_ISBN
    0-7803-5187-8
  • Type

    conf

  • DOI
    10.1109/IPFA.1999.791325
  • Filename
    791325
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3133866