Title :
A novel dual-direction IC ESD protection device
Author :
Wang, Albert Z. ; Tsay, Chen H. ; Shan, Qing W.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Inst. of Technol., Chicago, IL, USA
Abstract :
We report the design of a novel dual-direction on-chip IC electrostatic discharge (ESD) protection device. The design was predicted by simulation, matched by measurements and features a high ESD-Si ratio of ~80 V/μm, deep snapback, low Ron of 0.64 Ω, low leakage (~pA), adjustable triggering voltage, and good scalability
Keywords :
circuit simulation; electrostatic discharge; integrated circuit measurement; integrated circuit reliability; leakage currents; protection; 064 ohm; ESD-Si ratio; adjustable triggering voltage; design prediction; device measurements; dual-direction IC ESD protection device; dual-direction on-chip IC electrostatic discharge protection device; leakage current; on-resistance; scalability; simulation; snapback; Breakdown voltage; Clamps; Electrostatic discharge; Electrostatic interference; Electrostatic measurements; Impedance; Predictive models; Protection; Pulse measurements; Thyristors;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
DOI :
10.1109/IPFA.1999.791325
