Bandgaps enigeering in light-emitting polymers via from p-n diblock compolymerization to inorganic/organic hybridization

Author

Xie, Ling-Hai ; Huang, Wei

Author_Institution

Jiangsu Key Lab. for Org. Electron. & Inf. Displays, Nanjing Univ. of Posts & Telecommun. (NUPT), Nanjing, China

fYear

2009

fDate

13-17 July 2009

Firstpage

1

Lastpage

2

Abstract

Heteroatom-containing pi-conjugated p-n diblock copolymers, pi-conjugated metallopolymers, and nanocrystal-hybridized rod-coil polymers as well as pi-stacked polymers have been explored as promising new-generation materials for optoelectrical devices.

Keywords

light emitting devices; nanophotonics; nanostructured materials; optical polymers; organic-inorganic hybrid materials; polymer blends; polymerisation; bandgap engineering; heteroatom-containing pi-conjugated p-n diblock copolymers; inorganic-organic hybridization; light-emitting devices; light-emitting polymers; nanocrystal-hybridized rod-coil polymers; new-generation materials; optoelectrical devices; p-n diblock compolymerization; pi-conjugated metallopolymers; pi-stacked polymers; Charge carrier processes; Displays; Energy exchange; Excitons; Fluorescence; Inorganic materials; Nanocrystals; Phosphorescence; Photonic band gap; Polymers;

fLanguage

English

Publisher

ieee

Conference_Titel

OptoElectronics and Communications Conference, 2009. OECC 2009. 14th

Conference_Location

Hong Kong

Print_ISBN

978-1-4244-4102-0

Electronic_ISBN

978-1-4244-4103-7

Type

conf

DOI

10.1109/OECC.2009.5221629

Filename

5221629