DocumentCode :
3133938
Title :
Study on LED degradation using CL, EBIC and a two-diode parameter extraction model
Author :
Xiao, H. ; Liu, Y.Y. ; Phang, J.C.H. ; Chan, D.S.H. ; Chim, W.K. ; Yan, K.P.
Author_Institution :
Centre for Integrated Circuit Failure Analysis & Reliability, Nat. Univ. of Singapore, Singapore
fYear :
1999
fDate :
1999
Firstpage :
180
Lastpage :
184
Abstract :
LED degradation was investigated using cathodoluminescence (CL), electron-beam-induced current (EBIC) and device parameter extraction using a two-diode model. After electrical stress, the nonradiative recombination current increases, and the electroluminescence (EL) intensity at constant current bias decreases. The average EBIC and CL intensities also decrease. There is a good correlation between CL, EL and EBIC measurements. The two-diode model can reasonably model the LED degradation behaviour
Keywords :
EBIC; cathodoluminescence; electric current; electroluminescence; electron beam testing; electron-hole recombination; light emitting diodes; semiconductor device models; semiconductor device reliability; semiconductor device testing; CL; CL intensity; CL measurements; EBIC; EBIC intensity; EBIC measurements; EL measurements; LED degradation; LED degradation behaviour model; cathodoluminescence; constant current bias; device parameter extraction; electrical stress; electroluminescence intensity; electron-beam-induced current; nonradiative recombination current; two-diode model; two-diode parameter extraction model; Current measurement; Degradation; Light emitting diodes; Parameter extraction; Performance evaluation; Pollution measurement; Scanning electron microscopy; Semiconductor device measurement; Stress; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits, 1999. Proceedings of the 1999 7th International Symposium on the
Print_ISBN :
0-7803-5187-8
Type :
conf
DOI :
10.1109/IPFA.1999.791330
Filename :
791330
Link To Document :
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