Monte Carlo simulation of diffusion noise in AlGaAs/InGaAs/GaAs hetero-structure

Author

Wu, Y. ; Niu, G.F. ; Ruan, G.

Author_Institution

Dept. of Electron. Eng., Fudan Univ., Shanghai, China

fYear

1995

fDate

9-13 May 1995

Firstpage

401

Lastpage

403

Abstract

The diffusion noise of the 2-D electron gas in an AlGaAs/InGaAs/GaAs heterostructure is studied by Monte Carlo simulation. The dependencies of velocity correlation function on parameters including electric field, charge sheet density, and InGaAs thickness are discussed, and comparisons with the AlGaAs/GaAs heterostructure are made

Keywords

III-V semiconductors; Monte Carlo methods; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; random noise; semiconductor device noise; semiconductor heterojunctions; two-dimensional electron gas; 2D electron gas; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs heterostructure; InGaAs thickness; Monte Carlo simulation; charge sheet density; diffusion noise; electric field dependence; microwave FET; two dimensional electron gas FET; velocity correlation function; Electron devices; Fourier transforms; Gallium arsenide; Indium gallium arsenide; Microwave FETs; Microwave frequencies; Monte Carlo methods; Noise figure; Particle scattering; Phonons;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522164

Filename

522164