Title :
InAlAs/InGaAs HEMT using InGaP Schottky contact layer
Author :
Amano, M. ; Fujita, S. ; Hosoi, S. ; Noda, T. ; Sasaki, A. ; Ashizawa, Y.
Author_Institution :
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
Abstract :
In this study, Schottky diode characteristics have been improved by using both annealed Pt for Schottky contact metal and undoped InAlAs for underlayer of the InGaP layer. InGaP-SC-HEMTs with 0.1 μm T-shaped gate have been fabricated using Pt-based metals/InGaP/InAlAs Schottky gate contact in order to clarify the influence of insertion of a strained InGaP layer on DC and RF performances. The results show that gate characteristics of InGaP-SC-HEMTs were improved, and high gmmax and fT were obtained for 0.1 μm T-gate devices. Moreover, the lower Rs of InGaP-SC-HEMTs is expected to provide better noise characteristics than those of conventional HEMTs
Keywords :
III-V semiconductors; S-parameters; Schottky barriers; aluminium compounds; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; millimetre wave field effect transistors; semiconductor device metallisation; semiconductor device noise; 0.1 mum; 1 to 30 GHz; 140 GHz; DC performance; InAlAs-InGaAs; InAlAs/InGaAs HEMT; InGaP; InGaP Schottky contact layer; InGaP-SC-HEMTs; Pt-InGaP-InAlAs; RF performance; S parameters; Schottky contact metal; Schottky diode characteristics; T-shaped gate; annealed Pt; gate characteristics; noise characteristics; strained InGaP layer; undoped InAlAs underlayer; Annealing; Electrons; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Radio frequency; Schottky barriers; Schottky diodes; Thermal stresses;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522168
