Spacer design to improve the breakdown voltage of InAlAs-InGaAs HEMTs

Author

Tardy, J. ; Letartre, X. ; Viktorovitch, P. ; Gendry, M. ; Thompson, D.A. ; Simmons, J.G.

Author_Institution

Lab. d´´Electron., Ecole Centrale de Lyon, Ecully, France

fYear

1995

fDate

9-13 May 1995

Firstpage

420

Lastpage

423

Abstract

The work presented in this paper shows that the use of a mixed InAlAs/InP spacer rather than a conventional InAlAs spacer considerably improves the breakdown voltage of the devices in taking advantage of the large valence band offset of the InP/InGaAs heterojunction (0.42 eV). Also, this structure is entirely lattice matched thus avoiding the growth problems associated with strained layers. Furthermore, the noise associated with this device has been shown to be lower than that of conventional AlInAs/GaInAs HEMTs thanks to the low defect concentration in InP as compared to InAlAs

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; impact ionisation; indium compounds; microwave field effect transistors; semiconductor device noise; I-V characteristics; InAlAs-InGaAs; InAlAs-InGaAs HEMTs; InAlAs-InP; InP-InGaAs; InP/InGaAs heterojunction; breakdown voltage; defect concentration; impact ionization rate; lattice matched structure; microwave performance; mixed InAlAs/InP spacer; noise reduction; spacer design; valence band offset; Charge transfer; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Ionization; MODFETs; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on

Conference_Location

Hokkaido

Print_ISBN

0-7803-2147-2

Type

conf

DOI

10.1109/ICIPRM.1995.522169

Filename

522169