Title :
SPICE-based DC and microwave characterization of InAlAs/InGaAs HBTs used for large-bandwidth integrated transimpedance amplifiers
Author :
Yang, K. ; Gutierrez-Aitken, A.L. ; Zhang, X. ; Haddad, G.I. ; Bhattacharya, P.
Author_Institution :
Center for High Frequency Microelectron., Michigan Univ., Ann Arbor, MI, USA
Abstract :
The DC and small-signal microwave performance of InAlAs/InGaAs single HBTs (SHBTs) used for large-bandwidth monolithically integrated transimpedance amplifiers is characterized based on a new HBT model built in SPICE. Several effects observed from InGaAs SHBTs, which are not accounted for in the conventional Gummel-Poon BJT model, are modeled through a macromodeling approach. The developed HBT model accompanied by a detailed parameter-extraction process predicts accurately measured DC and AC characteristics of the HBTs and transimpedance amplifiers
Keywords :
III-V semiconductors; MMIC amplifiers; SPICE; aluminium compounds; bipolar MMIC; gallium arsenide; heterojunction bipolar transistors; indium compounds; microwave amplifiers; microwave bipolar transistors; semiconductor device models; wideband amplifiers; 17 to 19 GHz; AC characteristics; DC characterization; HBT model; InAlAs-InGaAs; InAlAs/InGaAs HBTs; SPICE; common emitter output characteristics; forward Gummel plot; gain frequency characteristics; large-bandwidth monolithically integrated transimpedance amplifiers; macromodeling approach; parameter-extraction process; small-signal microwave performance; soft breakdown characteristics; Capacitance; Circuits; Frequency measurement; Heterojunction bipolar transistors; Indium compounds; Indium gallium arsenide; Microwave amplifiers; Molecular beam epitaxial growth; Performance analysis; SPICE;
Conference_Titel :
Indium Phosphide and Related Materials, 1995. Conference Proceedings., Seventh International Conference on
Conference_Location :
Hokkaido
Print_ISBN :
0-7803-2147-2
DOI :
10.1109/ICIPRM.1995.522176
